Номер произв	IRFB31N20
Описание	Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
Производители	International Rectifier
логотип
1Page No Preview Available ! Drivers vmware scsi & raid devices. PD- 93805B IRFS31N20D HEXFET® Power MOSFET l High frequency DC-DC converters 200V 0.082Ω 31A l Low Gate-to-Drain Charge to Reduce l Fully Characterized Capacitance Including App. Note AN1001) and Current IRFB31N20D TO-262 Absolute Maximum Ratings ID @ TC = 100°C PD @TA = 25°C VGS TJ Parameter Continuous Drain Current, VGS @ 10V Power Dissipation ‡ Linear Derating Factor Peak Diode Recovery dv/dt ƒ Storage Temperature Range Mounting torqe, 6-32 or M3 screw† 31 124 200 ± 30 -55 to + 175 10 lbf•in (1.1N•m) A W/°C V/ns Typical SMPS Topologies Notes  through ‡ are on page 11 1 Ttpcom modems driver download for windows. No Preview Available ! Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage RDS(on) VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Reverse Leakage ––– 3.0 ––– ––– 0.25 ––– ––– 5.5 ––– 250 ––– -100 V/°C V nA Reference to 25°C, ID = 1mA VDS = VGS, ID = 250µA VDS = 160V, VGS = 0V, TJ = 150°C VGS = -30V Parameter Conditions Qg Total Gate Charge Qgd Gate-to-Drain ('Miller') Charge Turn-On Delay Time td(off) tf Fall Time Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance 17 ––– ––– S VDS = 50V, ID = 18A ID = 18A ––– 33 49 VGS = 10V, „ VDD = 100V ––– 26 ––– ––– 10 ––– ––– 2370 ––– ––– 390 ––– ––– 78 ––– pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– 170 ––– VGS = 0V, VDS = 0V to 160V EAS Single Pulse Avalanche Energy‚ EAR Repetitive Avalanche Energy Typ. ––– Max. 18 Units A Parameter Max. RθJC RθCS RθJA RθJA Diode Characteristics 0.50 ––– ––– °C/W 40 Min. Typ. Max. Units IS Continuous Source Current ISM Pulsed Source Current MOSFET symbol A showing the ––– ––– 124 G S trr Reverse Recovery Time ton Forward Turn-On Time ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „ ––– 1.7 2.6 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) No Preview Available ! 1000 VGS 15V 10V 7.0V 6.0V 10 0.1 20µs PULSE WIDTH 1 10 100 1000 VGS 15V 10V 7.0V 6.0V 10 20µs PULSE WIDTH 1 VDS, Drain-to-Source Voltage (V) 1000 TJ = 175 ° C TJ = 25° C 0.1 V DS= 50V 6 7 8 9 10 11 www.irf.com 2.5 1.5 0.5 0.0 TJ, Junction Temperature ( °C) Vs. Temperature
Всего страниц	11 Pages
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