Mosfet 7401
Jul 10, 2004 STABL offers modular battery inverters/converters that render high-voltage battery packs unnecessary. The modular approach works with safer low-voltage battery modules instead and is fail-operational against battery malfunction. AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS (ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS (ON) (at VGS=-10V) 8.1. Aon7400a.pdf Size:320K aosemi. Order today, ships today. AON7401 – P-Channel 30V 12A (Ta), 35A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount 8-DFN (3x3) from Alpha & Omega Semiconductor Inc. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
Type Designator: AON7401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 29 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 9.4 nS
Drain-Source Capacitance (Cd): 370 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: DFN3X3EP
AON7401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7401 Datasheet (PDF)
0.1. aon7401.pdf Size:269K _aosemi
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
8.1. aon7400a.pdf Size:320K _aosemi
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
8.2. aon7407.pdf Size:242K _aosemi
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
8.3. aon7403.pdf Size:172K _aosemi
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
8.4. aon7404.pdf Size:233K _aosemi
AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
8.5. aon7405.pdf Size:319K _aosemi
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
8.6. aon7409.pdf Size:323K _aosemi
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
8.7. aon7402.pdf Size:301K _aosemi
AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
8.8. aon7408.pdf Size:262K _aosemi
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
8.9. aon7400.pdf Size:199K _aosemi
AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)
8.10. aon7404g.pdf Size:344K _aosemi
AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
8.11. aon7406.pdf Size:270K _aosemi
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
Datasheet: AON7246, AON7254, AON7280, AON7290, AON7292, AON7296, AON7400, AON7400A, IRF510, AON7402, AON7403, AON7404, AON7405, AON7406, AON7407, AON7408, AON7409.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: AO7401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 0.35 W
Mosfet 7401 Wiring
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.4 V
Maximum Drain Current |Id|: 1.4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3.5 nS
Drain-Source Capacitance (Cd): 37 pF
Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm Timelink input devices driver.
Package: SC70-3
AO7401 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO7401 Datasheet (PDF)
0.1. ao7401.pdf Size:202K _aosemi
AO740130V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7401 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)
9.1. ao7404.pdf Size:240K _aosemi
AO7404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7404 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 1 A (VGS = 4.5V)operation with gate voltages as low as 1.8V, in the RDS(ON)
9.2. ao7403.pdf Size:110K _aosemi
AO7403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO7403 uses advanced trench technology to provide VDS (V) = -20Vexcellent RDS(ON), low gate charge, and operation with gate ID = -0.7A (VGS = -4.5V)voltages as low as 1.8V, in the small SOT323 footprint. It can RDS(ON)
9.3. ao7400.pdf Size:191K _aosemi
AO740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO7400 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and ID (at VGS=10V) 1.7Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=10V)
Ao 7401 Mosfet
9.4. ao7405.pdf Size:207K _aosemi
AO740530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO7405 uses advanced trench technology to -30Vprovide excellent RDS(ON), low gate charge, and ID (at VGS=-10V) -1.4Aoperation with gate voltages as low as 2.5V, in the RDS(ON) (at VGS=-10V)
9.5. ao7408.pdf Size:349K _aosemi
AO740820V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO7408 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=10V) 2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=4.5V)
9.6. ao7407.pdf Size:345K _aosemi
AO740720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO7407 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with ID (at VGS=-4.5V) -1.2Agate voltages as low as 1.8V. This device is suitable for RDS(ON) (at VGS=-4.5V)
9.7. ao7400.pdf Size:1277K _kexin
SMD Type MOSFETN-Channel MOSFETAO7400 (KO7400) Features VDS (V) = 30V ID = 1.7 A (VGS = 10V) RDS(ON) 55m (VGS = 10V)D RDS(ON) 65m (VGS = 4.5V) RDS(ON) 85m (VGS = 2.5V)1 Gate2 SourceG3 DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 12
Datasheet: AO6801, AO6801A, AO6801E, AO6802, AO6804A, AO6808, AO6810, AO7400, IRF640N, AO7403, AO7404, AO7405, AO7407, AO7408, AO7410, AO7411, AO7412.
7401 Mosfet Datasheet Pdf
LIST
Last Update
Mosfet 7401 Motor
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02